FDP070AN06A0 Series

N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor FDP070AN06A0	-55 °C	175 ░C	Through Hole	60 V	175 W	10 V	TO-220-3	TO-220-3	20 V	15 A 80 A	66 nC	MOSFET (Metal Oxide)	7 mOhm	N-Channel	4 V
ON Semiconductor FDP070AN06A0	-55 °C	175 ░C	Through Hole	60 V	175 W	10 V	TO-220-3	TO-220-3	20 V	15 A 80 A	66 nC	MOSFET (Metal Oxide)	7 mOhm	N-Channel	4 V

N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

• RDS(on)= 6.1 mΩ (Typ.) @ VGS= 10 V, ID= 80 A

• Qg(tot)= 51 nC (Typ.) @ VGS= 10 V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

N-Channel PowerTrench®MOSFET60 V, 80 A, 7 mΩ