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Discrete Semiconductor Products

CSD17570Q5B

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 0.92 MOHM

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VSON-CLIP (DNK)
Discrete Semiconductor Products

CSD17570Q5B

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 0.92 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17570Q5B
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]121 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]13600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)3.2 W
Rds On (Max) @ Id, Vgs0.69 mOhm
Supplier Device Package8-VSON-CLIP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.10
10$ 1.75
100$ 1.39
500$ 1.18
1000$ 1.00
Digi-Reel® 1$ 2.10
10$ 1.75
100$ 1.39
500$ 1.18
1000$ 1.00
Tape & Reel (TR) 2500$ 0.95
5000$ 0.91
Texas InstrumentsLARGE T&R 1$ 1.48
100$ 1.22
250$ 0.88
1000$ 0.66

Description

General part information

CSD17570Q5B Series

This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.

This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.