Discrete Semiconductor Products

IRFD110

Obsolete

MOSFET N-CH 100V 1A 4DIP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 1A 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD110

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	540 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	FET Type
Vishay General Semiconductor - Diodes Division IRFD110	8.3 nC	180 pF	1 A	1.3 W	20 V	4-DIP (0.300" 7.62mm)	100 V	4 V	10 V	-55 °C	175 ░C	540 mOhm	MOSFET (Metal Oxide)	Through Hole	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	523	$ 0.57

General part information

N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources