IRFD110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 100V 1A 4DIP
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Technology | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8.3 nC | 180 pF | 1 A | 1.3 W | 20 V | 4-DIP (0.300" 7.62mm) | 100 V | 4 V | 10 V | -55 °C | 175 ░C | 540 mOhm | MOSFET (Metal Oxide) | Through Hole | N-Channel |