Discrete Semiconductor Products

STB28NM50N

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STMicroelectronics

N-CHANNEL 500 V, 0.135 OHM TYP., 21 A MDMESH(TM) II POWER MOSFET IN D2PAK PACKAGE

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DocumentsSTB28NM50N | Datasheet +16

Discrete Semiconductor Products

STB28NM50N

Active

STMicroelectronics

N-CHANNEL 500 V, 0.135 OHM TYP., 21 A MDMESH(TM) II POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsSTB28NM50N | Datasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB28NM50N

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1735 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	158 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STB28NM50N Series

N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)
STMicroelectronics STB28NM50N	50 nC	10 V	150 °C	150 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1735 pF	21 A	N-Channel	4 V	158 mOhm	Surface Mount	MOSFET (Metal Oxide)	D2PAK	25 V	500 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	87	$ 7.81

Description

General part information

STB28NM50N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.