Specification	FCP130N60

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	3590 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCP130N60 Series

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 28 A, 130 mΩ, TO-220

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
ON Semiconductor FCP130N60	TO-220-3	10 V	3590 pF	3.5 V	-55 °C	150 °C	278 W	20 V	28 A	600 V	MOSFET (Metal Oxide)	130 mOhm	N-Channel	TO-220-3	70 nC	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	127	$ 2.89
Newark	Each	500	$ 2.67
ON Semiconductor	N/A	1	$ 2.30

Description

General part information

FCP130N60 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.