FCP130N60 Series

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 28 A, 130 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 28 A, 130 mΩ, TO-220

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
ON Semiconductor FCP130N60	TO-220-3	10 V	3590 pF	3.5 V	-55 °C	150 °C	278 W	20 V	28 A	600 V	MOSFET (Metal Oxide)	130 mOhm	N-Channel	TO-220-3	70 nC	Through Hole

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 28 A, 130 mΩ, TO-220

Key Features

• 650 V @ TJ= 150°C

• Typ. RDS(on)= 112 mΩ

• Ultra Low Gate Charge (Typ. Qg= 54 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 240 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.