NDS331N
ActiveN-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 20V, 1.3A, 0.21Ω
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NDS331N
ActiveN-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 20V, 1.3A, 0.21Ω
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NDS331N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.7 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 162 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.52 | |
| 10 | $ 0.34 | |||
| 100 | $ 0.25 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.18 | |||
| Digi-Reel® | 1 | $ 0.52 | ||
| 10 | $ 0.34 | |||
| 100 | $ 0.25 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.18 | |||
| Tape & Reel (TR) | 3000 | $ 0.13 | ||
| 6000 | $ 0.13 | |||
| 9000 | $ 0.13 | |||
| 15000 | $ 0.13 | |||
| 21000 | $ 0.12 | |||
| 30000 | $ 0.12 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.14 | |
| 6000 | $ 0.14 | |||
| 12000 | $ 0.13 | |||
| 18000 | $ 0.13 | |||
| 30000 | $ 0.13 | |||
| ON Semiconductor | N/A | 1 | $ 0.13 | |
Description
General part information
NDS331N Series
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Documents
Technical documentation and resources