NDS331N Series

N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NDS331N	160 mOhm	SOT-23-3	4.5 V	2.7 V	500 mW	-55 °C	150 °C	N-Channel	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	5 nC	Surface Mount	1.3 A	8 V	20 V	1 V	162 pF

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω

Key Features

• 1.3 A, 20 VRDS(ON)= 0.21Ω @ VGS= 2.7 VRDS(ON)= 0.16 Ω @ VGS= 4.5 V

• Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities

• High density cell design for extremely low RDS(ON)

• Exceptional on-resistance and maximum DC current capability

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.