Discrete Semiconductor Products

FDMA430NZ

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SINGLE N-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET 30V, 5.0A, 40MΩ

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Discrete Semiconductor Products

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SINGLE N-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET 30V, 5.0A, 40MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDMA430NZ

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.4 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	6-MicroFET (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ

Part	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package
ON Semiconductor FDMA430NZ	12 V	Surface Mount	5 A	11 nC	1.5 V	2.4 W	800 pF	40 mOhm	N-Channel	30 V	2.5 V 4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	6-MicroFET (2x2)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on)@VGS=2.5V on special MicroFET leadframe.