Discrete Semiconductor Products

SCT040W65G3-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 45 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

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Discrete Semiconductor Products

SCT040W65G3-4AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 45 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

DocumentsAN3152 +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT040W65G3-4AG

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	37.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-4
Power Dissipation (Max)	240 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	63 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT040W65G3-4AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Part	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Grade	Mounting Type	Vgs (Max) [Max]	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Qualification
STMicroelectronics SCT040W65G3-4AG	200 °C	-55 ░C	N-Channel	15 V 18 V	37.5 nC	650 V	240 W	Automotive	Through Hole	-5 V 18 V	TO-247-4	TO-247-4	30 A	860 pF	63 mOhm	4.2 V	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	25	$ 13.11
Newark	Each	1	$ 18.94
		10	$ 18.04
		25	$ 17.66
		50	$ 16.42
		100	$ 15.76
		250	$ 14.45
		500	$ 14.14

Description

General part information

SCT040W65G3-4AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.