Specification	2SA1962RTU

Current - Collector (Ic) (Max) [Max]	17 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	55
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	130 W
Supplier Device Package	TO-3P
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	250 V

2SA1962 Series

PNP Epitaxial Silicon Transistor

Part	Power - Max [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Mounting Type	Frequency - Transition
ON Semiconductor 2SA1962RTU	130 W	PNP	-55 °C	150 °C	5 µA	17 A	3 V	SC-65-3 TO-3P-3	250 V	55	TO-3P	Through Hole	30 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	102	$ 2.95

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources