
Discrete Semiconductor Products
PDTD123YT/APGVL
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS NPN 50V TO236AB
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Discrete Semiconductor Products
PDTD123YT/APGVL
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS NPN 50V TO236AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PDTD123YT/APGVL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | TO-236AB |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PDTD123 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 250 mW Surface Mount TO-236AB
Documents
Technical documentation and resources