Discrete Semiconductor Products
PDTD123YT-QR
ActiveNexperia USA Inc.
50 V, 500 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = 10 KΩ
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Search across all available documentation for this part.
Discrete Semiconductor Products
PDTD123YT-QR
ActiveNexperia USA Inc.
50 V, 500 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = 10 KΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PDTD123YT-QR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | TO-236AB |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic [Max] | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.04 | |
| 6000 | $ 0.04 | |||
| 9000 | $ 0.03 | |||
| 30000 | $ 0.03 | |||
| 75000 | $ 0.03 | |||
| 150000 | $ 0.03 | |||
Description
General part information
PDTD123 Series
NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources
