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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB14NK60ZT4

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STMicroelectronics

N-CHANNEL 600 V, 0.45 OHM TYP., 13.5 A SUPERMESH POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheet+15
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB14NK60ZT4

Active
STMicroelectronics

N-CHANNEL 600 V, 0.45 OHM TYP., 13.5 A SUPERMESH POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB14NK60ZT4
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]75 nC
Input Capacitance (Ciss) (Max) @ Vds2220 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Rds On (Max) @ Id, Vgs500 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.42
10$ 3.71
100$ 3.00
500$ 2.67
Digi-Reel® 1$ 4.42
10$ 3.71
100$ 3.00
500$ 2.67
N/A 218$ 5.43
Tape & Reel (TR) 1000$ 2.06

Description

General part information

STB14 Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.