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8-SOIC
Discrete Semiconductor Products

SQ4435EY-T1_GE3

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8-SOIC
Discrete Semiconductor Products

SQ4435EY-T1_GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQ4435EY-T1_GE3
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]58 nC
Input Capacitance (Ciss) (Max) @ Vds2170 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max) [Max]6.8 W
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.39
10$ 1.13
100$ 0.88
500$ 0.75
1000$ 0.61
Digi-Reel® 1$ 1.39
10$ 1.13
100$ 0.88
500$ 0.75
1000$ 0.61
Tape & Reel (TR) 2500$ 0.52

Description

General part information

SQ4435 Series

P-Channel 30 V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC

Documents

Technical documentation and resources