Zenode.ai Logo
Beta
FDS86242
Discrete Semiconductor Products

FDS8858CZ

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 8.6 A, 8.6 A, 0.017 OHM

Deep-Dive with AI

Search across all available documentation for this part.

FDS86242
Discrete Semiconductor Products

FDS8858CZ

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 8.6 A, 8.6 A, 0.017 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS8858CZ
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]8.6 A
Current - Continuous Drain (Id) @ 25°C [Min]7.3 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs24 nC
Input Capacitance (Ciss) (Max) @ Vds1205 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]900 mW
Rds On (Max) @ Id, Vgs17 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.48
10$ 0.94
100$ 0.62
500$ 0.49
1000$ 0.45
Digi-Reel® 1$ 1.48
10$ 0.94
100$ 0.62
500$ 0.49
1000$ 0.45
Tape & Reel (TR) 2500$ 0.39
5000$ 0.37
7500$ 0.35
12500$ 0.35
NewarkEach (Supplied on Full Reel) 2500$ 0.41
5000$ 0.39
10000$ 0.39
15000$ 0.38
ON SemiconductorN/A 1$ 0.37

Description

General part information

FDS8858CZ Series

These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.