Discrete Semiconductor Products

SCT012H90G3AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 900 V, 12 MOHM TYP., 110 A IN AN H2PAK-7 PACKAGE

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Discrete Semiconductor Products

SCT012H90G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 900 V, 12 MOHM TYP., 110 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsDatasheet +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT012H90G3AG

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	138 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max) [Max]	625 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15.8 mOhm
Supplier Device Package	H2PAK-7
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT012H90G3AG Series

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Part	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Qualification	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type
STMicroelectronics SCT012H90G3AG	900 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	138 nC	3880 pF	Automotive	H2PAK-7	175 °C	-55 °C	625 W	110 A	4.2 V	AEC-Q101	N-Channel	15 V 18 V	-5 V 18 V	15.8 mOhm	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 24.50
		10	$ 17.90
	Digi-Reel®	1	$ 24.50
		10	$ 17.90
	N/A	934	$ 23.25
	Tape & Reel (TR)	1000	$ 14.63
Newark	Each (Supplied on Cut Tape)	1	$ 49.96
		1	$ 49.96
		10	$ 46.82
		10	$ 46.82
		25	$ 43.05
		25	$ 43.05
		50	$ 40.03
		50	$ 40.03
		100	$ 36.69
		100	$ 36.69
		250	$ 34.43
		250	$ 34.43
		500	$ 32.69
		500	$ 32.69
		1000	$ 30.73
		1000	$ 30.73

Description

General part information

SCT012H90G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.