
Discrete Semiconductor Products
SQD40N06-25L-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 30A TO252
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Discrete Semiconductor Products
SQD40N06-25L-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 30A TO252
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SQD40N06-25L-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 22 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SQD40 Series
N-Channel 60 V 30A (Tc) Surface Mount TO-252AA
Documents
Technical documentation and resources
No documents available