SQD40 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 100V 38A TO252AA
| Part | Qualification | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | AEC-Q101 | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 38 A | 40 mOhm | P-Channel | 144 nC | Automotive | 136 W | 5540 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.5 V | 20 V | 100 V | TO-252AA | 4.5 V 10 V |
Vishay General Semiconductor - Diodes Division | AEC-Q101 | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 25 mOhm | N-Channel | 70 nC | Automotive | 136 W | 3380 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.5 V | 20 V | 100 V | TO-252AA | 4.5 V 10 V | |
Vishay General Semiconductor - Diodes Division | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 25 mOhm | N-Channel | 70 nC | 136 W | 3380 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.5 V | 20 V | 100 V | TO-252AA | 4.5 V 10 V | |||
Vishay General Semiconductor - Diodes Division | AEC-Q101 | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 30 A | 22 mOhm | N-Channel | 40 nC | Automotive | 1800 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3 V | 20 V | 60 V | TO-252AA | 10 V |