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MIC2920A-5.0WT
Discrete Semiconductor Products

DN2535N5-G

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Microchip Technology

POWER MOSFET, N CHANNEL, 350 V, 500 MA, 17 OHM, TO-220AB, THROUGH HOLE

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MIC2920A-5.0WT
Discrete Semiconductor Products

DN2535N5-G

Active
Microchip Technology

POWER MOSFET, N CHANNEL, 350 V, 500 MA, 17 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDN2535N5-G
Current - Continuous Drain (Id) @ 25°C500 mA
Drain to Source Voltage (Vdss)350 V
Drive Voltage (Max Rds On, Min Rds On)0 V
FET FeatureDepletion Mode
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]300 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]15 W
Rds On (Max) @ Id, Vgs25 Ohm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.69
25$ 1.40
100$ 1.28
Microchip DirectCTUBE 1$ 1.69
25$ 1.40
100$ 1.28
1000$ 1.25
5000$ 1.24
NewarkEach 100$ 1.33

Description

General part information

DN2535 Series

DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.