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Nexperia-PBSS5260PAP,115 GP BJT Trans GP BJT PNP 60V 2A 2000mW Automotive AEC-Q101 6-Pin HUSON EP T/R
Discrete Semiconductor Products

PBSS4260PAN,115

Active
Freescale Semiconductor - NXP

TRANS GP BJT NPN 60V 2A 2000MW AUTOMOTIVE AEC-Q101 6-PIN HUSON EP T/R

Nexperia-PBSS5260PAP,115 GP BJT Trans GP BJT PNP 60V 2A 2000mW Automotive AEC-Q101 6-Pin HUSON EP T/R
Discrete Semiconductor Products

PBSS4260PAN,115

Active
Freescale Semiconductor - NXP

TRANS GP BJT NPN 60V 2A 2000MW AUTOMOTIVE AEC-Q101 6-PIN HUSON EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4260PAN,115
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic90 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.56
10$ 0.48
100$ 0.33
500$ 0.26
1000$ 0.21
Digi-Reel® 1$ 0.56
10$ 0.48
100$ 0.33
500$ 0.26
1000$ 0.21
Tape & Reel (TR) 3000$ 0.19
6000$ 0.18
9000$ 0.17
30000$ 0.16

Description

General part information

PBSS4260PAN Series

NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.