60 V, 2 A NPN/NPN low VCEsat transistor
60 V, 2 A NPN/NPN low VCEsat transistor
60 V, 2 A NPN/NPN low VCEsat transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Qualification | Transistor Type | Operating Temperature | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Mounting Type | Current - Collector (Ic) (Max) [Max] | Package / Case | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 350 mV | 60 V | 100 nA | DFN2020D-6 | AEC-Q101 | 1 NPN 1 PNP | 150 °C | 370 mW | 120 | 140 MHz | Surface Mount | 2 A | 6-UDFN Exposed Pad | Automotive |
 Freescale Semiconductor - NXP | 90 mV | 60 V | 100 nA | 6-HUSON (2x2) | AEC-Q100 | 2 NPN (Dual) | 150 °C | 510 mW | 120 | 140 MHz | Surface Mount | 2 A | 6-UFDFN Exposed Pad | Automotive |