PBSS4260 Series

60 V, 2 A NPN/NPN low VCEsat double transistor

Catalog

60 V, 2 A NPN/NPN low VCEsat double transistor

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Grade	Supplier Device Package	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification
Nexperia USA Inc. PBSS4260PANPSX	100 nA	370 mW	350 mV	150 °C	1 NPN 1 PNP	2 A	140 MHz	Automotive	DFN2020D-6	6-UDFN Exposed Pad	Surface Mount	120	60 V	AEC-Q101
Nexperia USA Inc. PBSS4260PANSX	100 nA	370 mW	350 mV	150 °C	2 NPN (Dual)	2 A	140 MHz	Automotive	DFN2020D-6	6-UDFN Exposed Pad	Surface Mount	120	60 V	AEC-Q101
Nexperia USA Inc. PBSS4260PAN,115	100 nA	510 mW	90 mV	150 °C	2 NPN (Dual)	2 A	140 MHz	Automotive	6-HUSON (2x2)	6-UFDFN Exposed Pad	Surface Mount	120	60 V	AEC-Q100

Catalog

60 V, 2 A NPN/NPN low VCEsat double transistor

Description

NPN/NPN low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.