Discrete Semiconductor Products

SI3458BDV-T1-GE3

LTB

MOSFET N-CH 60V 4.1A 6TSOP

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 4.1A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3458BDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	3.3 W, 2 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SI3458BDV-T1-E3	SOT-23-6 Thin TSOT-23-6	4.1 A	350 pF	Surface Mount	11 nC	N-Channel	20 V	100 mOhm	60 V	MOSFET (Metal Oxide)	2 W 3.3 W	3 V	6-TSOP	-55 °C	150 °C	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SI3458BDV-T1-GE3	SOT-23-6 Thin TSOT-23-6	4.1 A	350 pF	Surface Mount	11 nC	N-Channel	20 V	100 mOhm	60 V	MOSFET (Metal Oxide)	2 W 3.3 W	3 V	6-TSOP	-55 °C	150 °C	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SI3458DV-T1-E3	SOT-23-6 Thin TSOT-23-6	3.2 A		Surface Mount	16 nC	N-Channel	20 V	100 mOhm	60 V	MOSFET (Metal Oxide)		1 V	6-TSOP	-55 °C	150 °C	4.5 V 10 V	2 W

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General part information

N-Channel 60 V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

Technical documentation and resources