
Discrete Semiconductor Products
SI3458DV-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 3.2A 6TSOP
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Discrete Semiconductor Products
SI3458DV-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 3.2A 6TSOP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SI3458DV-T1-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.2 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power Dissipation (Max) [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SI3458 Series
N-Channel 60 V 3.2A (Ta) 2W (Ta) Surface Mount 6-TSOP
Documents
Technical documentation and resources
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