The ADL8105 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 5 GHz to 20 GHz.The ADL8105 provides a typical gain of 27 dB at 12 GHz to 17 GHz, a 1.8 dB typical noise figure from 12 GHz to 17 GHz, a typical output third-order intercept (OIP3) of 30.5 dBm at 12 GHz to 17 GHz, and a saturated output power (PSAT) of up to 20.5 dBm, requiring only 90 mA from a 5 V supply voltage. The power dissipation can be lowered at the expense of OIP3 and output power (POUT). The ADL8105 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled, and the bias inductor is also integrated, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The ADL8105 is housed in an RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP package.APPLICATIONSTelecommunicationsSatellite communicationsMilitary radarWeather radarElectronic warfareInstrumentation