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TO-220-3
Discrete Semiconductor Products

AOTF10T60

Obsolete
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO220-3F

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TO-220-3
Discrete Semiconductor Products

AOTF10T60

Obsolete
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO220-3F

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAOTF10T60
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds1346 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)43 W
Rds On (Max) @ Id, Vgs700 mOhm
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.50

Description

General part information

AOTF10 Series

N-Channel 600 V 10A (Tc) 43W (Tc) Through Hole TO-220F

Documents

Technical documentation and resources