Discrete Semiconductor Products

AOTF10B60D2

NRND

Alpha & Omega Semiconductor Inc.

IGBT 600V 10A TO-220F

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Discrete Semiconductor Products

AOTF10B60D2

NRND

Alpha & Omega Semiconductor Inc.

IGBT 600V 10A TO-220F

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF10B60D2

Current - Collector (Ic) (Max) [Max]	23 A
Current - Collector Pulsed (Icm)	20 A
Gate Charge	9.4 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	31.2 W
Reverse Recovery Time (trr)	98 ns
Supplier Device Package	TO-220F
Switching Energy	40 µJ, 140 µJ
Td (on/off) @ 25°C [Max]	83 ns
Td (on/off) @ 25°C [Min]	12 ns
Test Condition	400 V, 15 V, 60 Ohm, 5 A
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

AOTF10 Series

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Operating Temperature [Max]	Operating Temperature [Min]	Test Condition	Switching Energy	Package / Case	Gate Charge	Td (on/off) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Alpha & Omega Semiconductor Inc. AOTF10B60D2	1.8 V	Through Hole	12 ns	83 ns	31.2 W	600 V	TO-220F	98 ns	23 A	20 A	150 °C	-55 °C	5 A 15 V 60 Ohm 400 V	40 µJ 140 µJ	TO-220-3 Full Pack	9.4 nC
Alpha & Omega Semiconductor Inc. AOTF10B65M2	2 V	Through Hole			30 W	650 V	TO-220	262 ns	20 A	30 A	150 °C	-55 °C	10 A 15 V 30 Ohm 400 V	130 µJ 180 µJ	TO-220-3	24 nC	12 ns 91 ns
Alpha & Omega Semiconductor Inc. AOTF10N65		Through Hole					TO-220F				150 °C	-55 °C			TO-220-3 Full Pack			1 Ohm	MOSFET (Metal Oxide)	4.5 V	10 V	10 A	30 V	N-Channel	650 V	50 W	1645 pF
Alpha & Omega Semiconductor Inc. AOTF10T60		Through Hole					TO-220F				150 °C	-55 °C			TO-220-3 Full Pack			700 mOhm	MOSFET (Metal Oxide)	5 V	10 V	10 A	30 V	N-Channel	600 V	43 W		1346 pF	35 nC
Alpha & Omega Semiconductor Inc. AOTF10B65M1	2 V	Through Hole			30 W	650 V	TO-220	263 ns	20 A	30 A	150 °C	-55 °C	10 A 15 V 30 Ohm 400 V	130 µJ 180 µJ	TO-220-3	24 nC	12 ns 91 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.73
	Tube	1000	$ 0.71

Description

General part information

AOTF10 Series

IGBT 600 V 23 A 31.2 W Through Hole TO-220F

Documents

Technical documentation and resources