NTH4L020N120SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 102 A, 1.2 KV, 0.02 OHM, TO-247
NTH4L020N120SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 102 A, 1.2 KV, 0.02 OHM, TO-247
Technical Specifications
Parameters and characteristics for this part
| Specification | NTH4L020N120SC1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 102 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2943 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 510 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | TO-247-4L |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -15 V |
| Vgs(th) (Max) @ Id | 4.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 37.35 | |
| 30 | $ 30.97 | |||
| 120 | $ 29.03 | |||
| ON Semiconductor | N/A | 1 | $ 22.04 | |
Description
General part information
NTH4L020N120SC1 Series
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Documents
Technical documentation and resources