Discrete Semiconductor Products
FDS4470
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 12.5 A, 40 V, 0.006 OHM, 10 V, 3.9 V ROHS COMPLIANT: YES
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Discrete Semiconductor Products
FDS4470
ActiveON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 12.5 A, 40 V, 0.006 OHM, 10 V, 3.9 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDS4470 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12.5 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 63 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2659 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 30 V |
| Vgs (Max) [Min] | -20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FDS4470 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.
Documents
Technical documentation and resources