FDS4470 Series

N-Channel PowerTrench® MOSFET, 40V, 12.5A, 9mΩ

Catalog

N-Channel PowerTrench® MOSFET, 40V, 12.5A, 9mΩ

Part	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
ON Semiconductor FDS4470	2.5 W	MOSFET (Metal Oxide)	12.5 A	63 nC	8-SOIC	-20 V	30 V	Surface Mount	2659 pF	8-SOIC	3.9 mm	0.154 in	10 V	N-Channel	-55 °C	175 ░C	40 V	9 mOhm	5 V

Catalog

N-Channel PowerTrench® MOSFET, 40V, 12.5A, 9mΩ

Key Features

• 12.5 A, 40 V. RDS(ON)= 9 mΩ @ VGS= 10 V

• Low gate charge (45 nC)

• High performance trench technology for extremelylow RDS(ON)

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.