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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

2N5682

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Microchip Technology

TRANS GP BJT NPN 120V 1A 1000MW 3-PIN TO-39 BAG

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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

2N5682

Active
Microchip Technology

TRANS GP BJT NPN 120V 1A 1000MW 3-PIN TO-39 BAG

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5682
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
Supplier Device PackageTO-39 (TO-205AD)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 20.17
Microchip DirectN/A 1$ 21.73
NewarkEach 100$ 20.18
500$ 19.40

Description

General part information

2N5682-Transistor Series

This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices. The device package outlines are as follows: TO-205AD (TO-39) for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/583.

Documents

Technical documentation and resources