Littelfuse-IXXH50N60B3D1 IGBT Chip Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD

Discrete Semiconductor Products

IXFH26N50P3

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 500V 26A 3-PIN(3+TAB) TO-247AD

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Discrete Semiconductor Products

IXFH26N50P3

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 500V 26A 3-PIN(3+TAB) TO-247AD

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH26N50P3

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2220 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IXFH26N100X Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXFH26N100X	320 mOhm	113 nC	TO-247-3	30 V	10 V	3290 pF	-55 °C	150 °C	TO-247	Through Hole	MOSFET (Metal Oxide)	6 V	1000 V	860 W	N-Channel	26 A
Littelfuse/Commercial Vehicle Products IXFH26N50P	230 mOhm	60 nC	TO-247-3	30 V	10 V		-55 °C	150 °C	TO-247AD (IXFH)	Through Hole	MOSFET (Metal Oxide)	5.5 V	500 V		N-Channel	26 A	400 W	3600 pF
Littelfuse/Commercial Vehicle Products IXFH26N60P			TO-247-3	30 V	10 V		-55 °C	150 °C	TO-247AD (IXFH)	Through Hole	MOSFET (Metal Oxide)	5 V	600 V	460 W	N-Channel	26 A			270 mOhm	72 nC
Littelfuse/Commercial Vehicle Products IXFH26N50P3	230 mOhm		TO-247-3	30 V	10 V	2220 pF	-55 °C	150 °C	TO-247AD (IXFH)	Through Hole	MOSFET (Metal Oxide)	5 V	500 V	500 W	N-Channel	26 A				42 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.70
		30	$ 6.14
		120	$ 5.50
		510	$ 4.85
		1020	$ 4.36
		2010	$ 4.09

Description

General part information

IXFH26N100X Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

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Technical documentation and resources

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