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TO-247_IXFH
Discrete Semiconductor Products

IXFH26N100X

Active
Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 1KV 26A 3-PIN(3+TAB) TO-247 BULK

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TO-247_IXFH
Discrete Semiconductor Products

IXFH26N100X

Active
Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 1KV 26A 3-PIN(3+TAB) TO-247 BULK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFH26N100X
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]113 nC
Input Capacitance (Ciss) (Max) @ Vds3290 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)860 W
Rds On (Max) @ Id, Vgs320 mOhm
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 30$ 15.25
90$ 14.36
300$ 13.91
750$ 13.01
NewarkEach 250$ 12.53
500$ 11.64

Description

General part information

IXFH26N100X Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources