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Discrete Semiconductor Products

JAN2N3868U4

Active
Microchip Technology

PNP SILICON LOW-POWER -40V TO -60V, -3A

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U4
Discrete Semiconductor Products

JAN2N3868U4

Active
Microchip Technology

PNP SILICON LOW-POWER -40V TO -60V, -3A

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N3868U4
Current - Collector (Ic) (Max)3 mA
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
GradeMilitary
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]1 W
QualificationMIL-PRF-19500/350
Supplier Device PackageU4
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 141.96
Microchip DirectN/A 1$ 152.88
NewarkEach 100$ 141.96
500$ 136.50

Description

General part information

JAN2N3868U4-Transistor Series

This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels.