Discrete Semiconductor Products

SI2367DS-T1-GE3

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MOSFET P-CH 20V 3.8A SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 20V 3.8A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2367DS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	23 nC
Input Capacitance (Ciss) (Max) @ Vds	561 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.7 W, 960 mW
Rds On (Max) @ Id, Vgs	66 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Package / Case	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI2367DS-T1-GE3	P-Channel	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	20 V	Surface Mount	561 pF	66 mOhm	SOT-23-3 (TO-236)	3.8 A	8 V	1.8 V 4.5 V	1 V	-55 °C	150 °C	1.7 W 960 mW	23 nC

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General part information

P-Channel 20 V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources