SI2367 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 20V 3.8A SOT23-3
| Part | FET Type | Package / Case | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | P-Channel | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 20 V | Surface Mount | 561 pF | 66 mOhm | SOT-23-3 (TO-236) | 3.8 A | 8 V | 1.8 V 4.5 V | 1 V | -55 °C | 150 °C | 1.7 W 960 mW | 23 nC |