Discrete Semiconductor Products

STH160N4LF6-2

Obsolete

MOSFETS N-CHANNEL 40 V, 2.7 MOHM TYP 160 A STRIPFET F6 POWER MOSFET IN H2PAK-2 PACKAGE

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Discrete Semiconductor Products

Obsolete

MOSFETS N-CHANNEL 40 V, 2.7 MOHM TYP 160 A STRIPFET F6 POWER MOSFET IN H2PAK-2 PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	STH160N4LF6-2

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	181 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	FET Type	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STH160N4LF6-2	H2Pak-2	175 °C	-55 °C	5 V 10 V	150 W	20 V	N-Channel	MOSFET (Metal Oxide)	1 V	120 A	Surface Mount	8130 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 mOhm	40 V	181 nC

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General part information

N-Channel 40 V 120A (Tc) 150W (Tc) Surface Mount H2PAK-2

Technical documentation and resources