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ONSEMI MJD31T4G
Discrete Semiconductor Products

FDD390N15A

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 150 V, 26 A, 0.0335 OHM, TO-252 (DPAK), SURFACE MOUNT

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ONSEMI MJD31T4G
Discrete Semiconductor Products

FDD390N15A

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 150 V, 26 A, 0.0335 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD390N15A
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1285 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)63 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.84
10$ 1.17
100$ 0.79
500$ 0.63
1000$ 0.57
Digi-Reel® 1$ 1.84
10$ 1.17
100$ 0.79
500$ 0.63
1000$ 0.57
Tape & Reel (TR) 2500$ 0.52
5000$ 0.49
NewarkEach (Supplied on Cut Tape) 1$ 2.03
10$ 1.43
25$ 1.31
50$ 1.18
100$ 1.06
ON SemiconductorN/A 1$ 0.45

Description

General part information

FDD390N15A Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.