FDD390N15A Series

N-Channel PowerTrench® MOSFET, 150V, 26A, 40mΩ

Catalog

N-Channel PowerTrench® MOSFET, 150V, 26A, 40mΩ

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type
ON Semiconductor FDD390N15A	40 mOhm	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	N-Channel	18.6 nC	63 W	MOSFET (Metal Oxide)	4 V	26 A	1285 pF	TO-252AA	20 V	150 V	Surface Mount

Catalog

N-Channel PowerTrench® MOSFET, 150V, 26A, 40mΩ

Key Features

• RDS(on)= 33.5mΩ ( Typ.)@ VGS= 10V, ID= 26A

• Fast Switching Speed

• Low Gate Charge, QG= 14.3nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.