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DO-203AA DO-4
Discrete Semiconductor Products

1N5812

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 50V, 20A, 35NS DO-4 TRAY

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DO-203AA DO-4
Discrete Semiconductor Products

1N5812

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 50V, 20A, 35NS DO-4 TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5812
Capacitance @ Vr, F300 pF
Current - Reverse Leakage @ Vr10 µA
Mounting TypeStud Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseStud, DO-203AA, DO-4
Reverse Recovery Time (trr)15 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-203AA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]50 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 53.94
Microchip DirectN/A 1$ 58.09
NewarkEach 100$ 53.94
500$ 51.86

Description

General part information

1N5812R-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 20 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources