Specification	PEMH11,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Power - Max [Max]	300 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SOT-666
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PEMH11 Series

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Nexperia USA Inc. PEMH11,315	2 NPN - Pre-Biased (Dual)	50 V	100 mA	300 mW	30	Surface Mount	SOT-563 SOT-666	10 kOhms	150 mV	1 µA	SOT-666
Nexperia USA Inc. PEMH11,115	2 NPN - Pre-Biased (Dual)	50 V	100 mA	300 mW	30	Surface Mount	SOT-563 SOT-666	10 kOhms	150 mV	1 µA	SOT-666

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources