50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ
| Part | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Package / Case | Resistor - Emitter Base (R2) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2 NPN - Pre-Biased (Dual) | 50 V | 100 mA | 300 mW | 30 | Surface Mount | SOT-563 SOT-666 | 10 kOhms | 150 mV | 1 µA | SOT-666 |
 Nexperia USA Inc. | 2 NPN - Pre-Biased (Dual) | 50 V | 100 mA | 300 mW | 30 | Surface Mount | SOT-563 SOT-666 | 10 kOhms | 150 mV | 1 µA | SOT-666 |