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SOT 1023
Discrete Semiconductor Products

NVMYS9D3N06CLTWG

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ON Semiconductor

POWER MOSFET 60 V, 9.3MΩ, 51 A, SINGLE N-CHANNEL

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SOT 1023
Discrete Semiconductor Products

NVMYS9D3N06CLTWG

Active
ON Semiconductor

POWER MOSFET 60 V, 9.3MΩ, 51 A, SINGLE N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS9D3N06CLTWG
Current - Continuous Drain (Id) @ 25°C50 A, 14 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]880 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)3.6 W, 46 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs9.2 mOhm
Supplier Device PackageLFPAK4
Supplier Device Package [x]5
Supplier Device Package [y]6
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.59
Digi-Reel® 1$ 1.59
Tape & Reel (TR) 3000$ 0.41
6000$ 0.38
9000$ 0.38
NewarkEach (Supplied on Full Reel) 1000$ 0.57

Description

General part information

NVMYS9D3N06CL Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.