
Discrete Semiconductor Products
NVMYS9D3N06CLTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 9.3MΩ, 51 A, SINGLE N-CHANNEL
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Discrete Semiconductor Products
NVMYS9D3N06CLTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 9.3MΩ, 51 A, SINGLE N-CHANNEL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMYS9D3N06CLTWG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A, 14 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 880 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1023, 4-LFPAK |
| Power Dissipation (Max) | 3.6 W, 46 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 9.2 mOhm |
| Supplier Device Package | LFPAK4 |
| Supplier Device Package [x] | 5 |
| Supplier Device Package [y] | 6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NVMYS9D3N06CL Series
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Documents
Technical documentation and resources