NVMYS9D3N06CL Series

Power MOSFET 60 V, 9.3mΩ, 51 A, Single N-Channel

Catalog

Power MOSFET 60 V, 9.3mΩ, 51 A, Single N-Channel

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max) [Max]
ON Semiconductor NVMYS9D3N06CLTWG	Surface Mount	14 A 50 A	AEC-Q101	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	60 V	-55 °C	175 ░C	5	LFPAK4	6	9.2 mOhm	3.6 W 46 W	880 pF	9.5 nC	Automotive	SOT-1023 4-LFPAK	2 V	20 V

Catalog

Power MOSFET 60 V, 9.3mΩ, 51 A, Single N-Channel

Key Features

• Small Footprint (5x6 mm)

• Low RDS (on)

• Low QGand Capacitance

• LFPAK4 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.