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TO-39
Discrete Semiconductor Products

2N3467

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Microchip Technology

TRANS GP BJT PNP 40V 1A 3-PIN TO-39

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TO-39
Discrete Semiconductor Products

2N3467

Active
Microchip Technology

TRANS GP BJT PNP 40V 1A 3-PIN TO-39

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3467
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition500 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]347 °F
Operating Temperature [Min]-55 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
Supplier Device PackageTO-39
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 10.34
Microchip DirectN/A 1$ 11.14
NewarkEach 100$ 10.35
500$ 9.95

Description

General part information

2N3467-Transistor Series

This specification covers the performance requirements for PNP silicon switching 2N3467 and 2N3468 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for the device type as specified in MIL-PRF-19500/348. The device package outlines are as follows: TO-39 and TO-5.

Documents

Technical documentation and resources