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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3467 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Frequency - Transition | 500 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 347 °F |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-39 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 10.34 | |
| Microchip Direct | N/A | 1 | $ 11.14 | |
| Newark | Each | 100 | $ 10.35 | |
| 500 | $ 9.95 | |||
Description
General part information
2N3467-Transistor Series
This specification covers the performance requirements for PNP silicon switching 2N3467 and 2N3468 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for the device type as specified in MIL-PRF-19500/348. The device package outlines are as follows: TO-39 and TO-5.
Documents
Technical documentation and resources