APTGTQ200A65T3G

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IGBT MODULE 650V 200A 483W SP3F

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Discrete Semiconductor Products

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IGBT MODULE 650V 200A 483W SP3F

Technical Specifications

Parameters and characteristics for this part

Specification	APTGTQ200A65T3G

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Cutoff (Max) [Max]	200 µA
Input	Standard
Input Capacitance (Cies) @ Vce	12 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	483 W
Supplier Device Package	SP3F
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

650V/Boost chopper/IGBT modules

Part	Voltage - Collector Emitter Breakdown (Max)	Configuration	Supplier Device Package	Input Capacitance (Cies) @ Vce	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	NTC Thermistor	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Input	Current - Collector (Ic) (Max) [Max]
Microchip Technology APTGTQ200A65T3G	650 V	Half Bridge	SP3F	12 nF	Module	200 µA	Chassis Mount	-40 C	175 °C		483 W	2.2 V	Standard	200 A
Microchip Technology APTGTQ200DA65T3G	650 V	Boost Chopper	SP3F	12 nF	Module	200 µA	Chassis Mount	-40 C	175 °C		483 W	2.2 V	Standard	200 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* High speed IGBT 5

* Low voltage drop

* Low tail current

Technical documentation and resources