Discrete Semiconductor Products
STW25N80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.190 OHM TYP., 19.5 A MDMESH K5 POWER MOSFET IN A TO-247 PACKAGE
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Discrete Semiconductor Products
STW25N80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.190 OHM TYP., 19.5 A MDMESH K5 POWER MOSFET IN A TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STW25N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) @ Id, Vgs [Max] | 260 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW25N80K5 Series
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources