Discrete Semiconductor Products

STP80N240K6

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STMicroelectronics

N-CHANNEL 800 V, 197 MOHM TYP., 16 A MDMESH K6 POWER MOSFET IN A TO-220 PACKAGE

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Discrete Semiconductor Products

STP80N240K6

Active

STMicroelectronics

N-CHANNEL 800 V, 197 MOHM TYP., 16 A MDMESH K6 POWER MOSFET IN A TO-220 PACKAGE

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DocumentsTN1225 +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP80N240K6

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

STP80N240K6 Series

N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type	Vgs (Max)
STMicroelectronics STP80N240K6	800 V	25.9 nC	16 A	TO-220	TO-220-3	4 V	150 °C	-55 °C	10 V	Through Hole	1350 pF	MOSFET (Metal Oxide)	220 mOhm	140 W	N-Channel	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	665	$ 6.19
Newark	Each	1	$ 5.42
		10	$ 4.80
		25	$ 4.59
TME	N/A	1	$ 9.17
		10	$ 8.30
		50	$ 7.29
		250	$ 6.55

Description

General part information

STP80N240K6 Series

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.