Discrete Semiconductor Products

SI4963BDY-T1-GE3

LTB

MOSFET 2P-CH 20V 4.9A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET 2P-CH 20V 4.9A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4963BDY-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Configuration	Mounting Type	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI4963BDY-T1-GE3	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	32 mOhm	4.9 A	1.1 W	-55 °C	150 °C	20 V	2 P-Channel	Surface Mount	MOSFET (Metal Oxide)	1.4 V	21 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 4.9A 1.1W Surface Mount 8-SOIC

Technical documentation and resources